Abstract
In-depth composition profiles of the anodic oxide films grown on Al (111), (110) and (100) single crystal electrodes in ammonium borate were tudied by Auger elecron spectroscopy with Ar ion etching. The oxide film had the composition at Al 2O 3 as referenced to an authentic α-Al 2O 3 single crystal. The Auger electron energy and peak shapes of Al and O in the oxide film agreed with those of α-Al 2O 3 crystal. Regardless of the crystal orientation of the substrate Al and in-depth profile, the oxide film has the chemical composition of Al 2O 3. The Auger signal peak of boron was approx. 1 50 of that of oxygen throughout the sputtered distance.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
