Abstract
Vanadium dioxide has a unique insulator-metal phase transition characteristic near room temperature, meeting optical switches' requirements. However, due to its high resistance in the insulator state, the working voltage threshold of the VO2-based optical switch is also high. It is one of the obstacles for VO2-based optical switch applications. In this work, high-quality VO2 films were prepared by DC pulsed magnetron sputtering. By inserting a conductive ITO buffer layer, VO2 sheet resistance reduced about 2 orders, and the electrical phase change characteristics have almost disappeared. Still, the high optical modulation ability is hardly affected. The interesting results meet the requirements of a low threshold working voltage electro-optic switch. In the case of a 40 µm electrode gap size, the threshold voltage for VO2/ITO is only 1.4 V, which is much lower than 20 V of pure VO2 in the same condition, and the optical switch modulation depth at the wavelength of 1550 nm reaches 35%. For the switch with 5 µm electrode gap size, the threshold voltage is only 1.3 V, and the response times of "ON" and "OFF" are 0.24 ms and 2.1 ms, respectively. This result is valuable for the practical application of VO2-based optical switches.
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