Abstract
The time of independent operation tind of indium antimonide photoresistors and photodiodes and photoresistors based on CdхHg1–хTe (х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for CdхHg1–хTe (х ~ 0.3) photoresistors. Time tind of the photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time tind of the photodetectors by optimizing the requirements for the characteristics of InSb and CdхHg1–хTe is discussed.
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