Abstract

Dual frequency capacitive discharges are designed to offer independent control of the flux and energy of ions impacting on an object immersed in a plasma. This is desirable in applications such as the processing of silicon wafers for microelectronics manufacturing. In such discharges, a low frequency component couples predominantly to the ions, while a high frequency component couples predominantly to electrons. Thus, the low frequency component controls the ion energy, while the high frequency component controls the plasma density. Clearly, this desired behaviour is not achieved for arbitrary configurations of the discharge, and in general one expects some unwanted coupling of ion flux and energy. In this paper we use computer simulations with the particle-in-cell method to show that the most important governing parameter is the ratio of the driving frequencies. If the ratio of the high and low frequencies is great enough, essentially independent control of the ion energy and flux is possible by manipulation of the high and low frequency power sources. Other operating parameters, such as pressure, discharge geometry, and absolute power, are of much less significance.

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