Abstract
ZnO whisker crystals were selectively grown in indented positions where several micron-sized Au catalyst atomies were formed on an Si substrate. In order to control the number density and the size of the whisker crystals, the effect of the distance (d ) between the Si substrate and the material supply source on the crystal shapes was examined. ZnO whiskers grew at d <5 mm, but particle crystals formed at d =10 mm. In contrast, the whisker crystal length/particle size was largest at d =5 mm, but was no more than 1 micron at d =10 mm. The crystal number density (/μm2) and the Zn quantity exhibited the same tendency, and decreased uniformly as d increased. The thermal disequilibrium within the distance d was a result of the temperature difference between the ZnO ceramics bar (1100 °C) and the atmosphere (700 °C). The ZnO sublimation quantity to form the whisker crystals could be controlled by d . (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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