Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3

Abstract

Three series of InGaN samples with different growth pressures are grown in a vertical metal organic chemical vapor deposition (MOCVD) system and the indium incorporation efficiency during InGaN layer growth is investigated. It is found that the indium content in InGaN layer decreases when the NH3 flow rate increases at a higher growth pressure and it increases with the NH3 flow rate at a lower growth pressure, This may be attributed to the higher dissociation rate of NH3 into N2 and H2 at a higher growth pressure, leading to a higher H2 concentration in reactor during InGaN growth. Therefore, changing growth conditions to suppress the dissociation of NH3 into N2 and H2 can increase the indium incorporation efficiency during InGaN film growth.