Increasing the concentration of recombination impurities as a means to suppress the amplification saturation effect in intrinsic threshold photoresistors with extracting contacts and impurity recombination of photo-generated carriers

Abstract

It is shown possible to avoid the well-known deleterious roperties of intrinsic photoresistors with extracting electrodes—gain saturation with increasing electric field. The gain saturation severely limits the photosensitvity of the device. This limitation is removed if the extracting electrodes are replaced with blocking electrodes, but this procedure is technologically very difficult to execute, and the method does not submit to reliable control. The possibility of avoiding saturation under conditions of a simultaneously large increase in the lifetime of the photogenerated carriers is of considerable interest for experimenters and for developers of photodetectors.