Abstract
Highly-sensitive Si photodetectors were prepared by using Ag nanowires (AgNWs). A transparent indium-tin-oxide (ITO) coating was coated on a Si substrate followed by spin-coating of AgNWs-containing solution. AgNWs having average length of 5–20μm with a diameter of about 40–60nm were observed in FESEM images. The haze effect of AgNWs was totally avoided because of the optimum value of diameter. The transmittance of above 85% was shown by AgNWs over a broad spectral range due to surface plasmon resonance effect. The AgNW-coated device showed an excellent rectifying ratio of 288. Under light illumination, AgNWs-coated device exhibited a significant photoresponse ratio of 5373. This advanced feature of AgNWs-templated method would be applied in broadband wavelength photodetection devices.
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