Abstract
We report a self-assembly method that produces greater spatial uniformity in InGaN thin films using optical near-field desorption. Spatial homogeneity in the In fraction was reduced by introducing additional light during the photo-enhanced chemical vapor deposition of InGaN. Near-field desorption of InGaN nanoparticles, upon addition depended on the In content of the film, and the photon energy of the illumination source determined the energy of the emitted photons. Since this deposition method is based on a photo-desorption reaction, it can easily be applied to other deposition techniques and used with other semiconductor systems.
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