Abstract
InP/GaInP quantum dots emitting in the red spectral range have been grown on an AlGaAs distributed Bragg reflector in order to increase the single-photon emission efficiency. We have observed an increase in ensemble photoluminescence by a factor of 28 in comparison to the reference InP/GaInP quantum dots grown without such a reflector underneath. Photon correlation measurements performed under pulsed excitation show a clear antibunching behavior ( g ( 2 ) ( 0 ) = 0.17 ) as expected for a single-photon emitter. Using aluminum containing barriers to surround the quantum dots the ensemble luminescence intensity could be increased by a factor of 500 at 240 K in comparison to the reference sample at 240 K.
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