Abstract
Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters.
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