Abstract
This paper presents the piezoresistive (PZR) effects of silicon nanowires (SiNWs) and evaluates the possibility of using them in biomimetic sensors. SiNWs have greatly enhanced PZR effects compared to bulk silicon. Their structure can be fabricated to resemble that of receptor cells to mimic their functions. In this paper, SiNWs are fabricated through a new microelectromechanical systems (MEMS) process. The developed process can independently control the width and thickness of SiNWs. The PZR effects of the fabricated SiNWs are measured using a four-point bending technique. They increase as their dimensions decrease, but change as a nonlinear function of the SiNW cross-section dimensions.
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