Abstract
The recombination lifetime of metal-organic chemical vapor deposition grown InGaAsN-GaAsP-GaAs lasers with nitrogen content of 0% and 0.5% has been investigated from below threshold modulation frequency response measurements. Using an analysis that removes the contribution of electrical parasitic effects from the measured lifetime, it is shown that the recombination lifetime is significantly reduced when nitrogen is added into the quantum well. Furthermore, it is shown that this reduction is mainly the result of approximately a factor of four increase in the monomolecular recombination rate.
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