Abstract
Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current–voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20μA∕cm2 at 1V∕μm), while the regrown sample exhibited a significantly increased emission site density.
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