Increase the current density and reduce the defects of ZnO by modification of the band gap edges with Cu ions implantation for efficient, flexible dye-sensitized solar cells (FDSSCs)

Abstract

Flexible dye-sensitized solar cells (FDSSCs) have good potential in future photovoltaic technology. The spin coating method deposited the ZnO films on indium-tin-oxide-coated polyethylene terephthalate (ITO-PET) flexible plastic substrates. These films are implanted with Cu-ions with 1 × 1013 ions/cm2, 1 × 1014 ions/cm2, and 1 × 1015 ions/cm2. All the films have a hexagonal structure. The film irradiated with 1 × 1014 ions/cm2 showed high crystallinity and crystallite size. Important optical properties like bandgap energy (Eg), band edges, refractive index, extinction coefficient, and dielectric constants are measured by UV–Vis spectroscopy. Bandgap energy decreases, and the refractive index increases at the fluence of Cu ions. The maximum decrease in Eg is observed at the 1 × 1014 ions/cm2 dose. Photoluminescence spectra suggest that defects-related emission peaks are decreased at 1 × 1014 ions/cm2 Cu ions fluency. J-V measurements have significantly improved photovoltaic performance compared to pristine ZnO-based solar cells. The highest efficiency (2.30%) is observed at a 1 × 1014 ions/cm2 dose. The efficiency increase is related to improving the charge transfer ratio and shifting the fermi level toward the conduction band.