Increase of SiC sublimation growth rate by optimizing of powder packaging

Abstract

In this paper, a comprehensive model for silicon carbide (SiC) sublimation crystal growth considering powder packaging is presented. This model is based on heat and mass transfer of porous powder charge with different sizes of the particle and accounts for induction heating, powder charge sublimation, vapor transport, and porosity evolution in a SiC sublimation crystal growth system. The mechanism of vapor transport is proposed by introducing a driving force arising from temperature difference between powder charge and seed in the growth system. Powder porosity evolution and sublimation rate variations are predicted based on vapor transport mechanism. Effects of powder geometry, such as particle sizes, volume and size ratios of different particles, and driving forces on the sublimation rate are studied. In addition, simulation results for powder sublimation with and without a central hole are presented. The results indicate that the sublimation rate can be increased by optimizing the powder packaging, or by creating a hole in the center of packed powder.