Abstract
We considered an organic field-effect transistor (OFET) based on a squaraine (SQ) fiber, where the electric conductance of the accumulation channel is comparable with the bulk conductance of the SQ fiber. Each of the measured output and transfer current-voltage characteristics was decomposed into two components, representing the conductance of the accumulation channel and the bulk. We present in detail, how the bulk conductance of the fiber can transform the output characteristics of the unipolar OFET. For positive drain and gate voltage, the hole injection from the drain always takes place when a drain voltage is applied. Depending on the ratio between the electron density (ns) injected from the source into accumulation channel and the hole density (pb) injected from the drain into the bulk, the saturation current of the unipolar OFET is constant (pb < ns) or exhibits increase (pb ≥ ns).
Highlights
Organic field-effect transistors (OFETs) are important building blocks for flexible electronic applications, considering their low-cost fabrication and flexibility over large areas.1,2 The most common configuration of an organic field-effect transistor (OFET) contains an organic semiconductor, upon which three metal electrodes are deposited
It is interesting to know the following: If the initial bulk conductance of the semiconductor (Vg=0) in the OFET described by the power law Id ∼ Vdβ is comparable than that of the accumulation channel in the saturation regime, is it possible that it leads to the increase of the saturation current and the output characteristic can be described by Eq (4)?
We have studied an OFET based on the squaraine fiber, the initial bulk conductance of which was comparable with the conductance of the accumulation channel of the OFET
Summary
Organic field-effect transistors (OFETs) are important building blocks for flexible electronic applications, considering their low-cost fabrication and flexibility over large areas.1,2 The most common configuration of an OFET contains an organic semiconductor, upon which three metal electrodes are deposited. Both electrons and holes are present in the accumulation channel, giving rise to an increase of the drain current in the Id(Vd) characteristic.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
