Abstract
AbstractThe effects of Cd‐doping on the thermoelectric properties of Sn1–xPbxTe are investigated and compared to the properties of the corresponding Sn1–xPbxTe solid solutions. The addition of Cd results in a reduction in the carrier concentration and changes in the physical properties, as well as in the conduction type of Sn1–xPbxTe. A significant increase in the power factor accompanied by a reduction in the thermal conductivity result in a higher figure of merit (ZT) for (Sn1–xPbx)0.97Cd0.03Te than that of undoped Sn1–xPbxTe. The maximum ZT (∼0.7) values are observed for p‐type material with x = 0.36 at 560 K. Much higher values (ZT ∼ 1.2 at 560 K for x = 0.73) are obtained on n‐type samples.
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