Abstract
Diamond is a promising material for high-power and low-loss semiconductor devices. However, the reported reverse blocking electric field of diamond-based power devices is as low as 2 MV/cm, and their performance is worse than ideal. We have developed reach-through-type Schottky barrier diodes (SBDs) with various Schottky barrier heights (SBHs) by changing metals. SBDs with high SBH show low leakage current and high operation limit of 3.1 MV/cm. This indicates that the reverse operation limit of diamond SBDs is determined not by leakage through defects but by carrier transport through the barrier. Reduction of specific on-resistance increases Baliga's figure of merit to 51 MW/cm2, which is tenfold higher than the Si limit.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
