Abstract
The rate of radiative band-to-band recombination in elastically strained direct-band narrow-gap semiconductors increases owing to the valence band transformation. At the same time, the rate of nonradiative band-to-band transitions (Auger recombination) decreases dramatically. As a result, the quantum efficiency of IR emission in the range of band-to-band transitions can be essentially raised and, as calculation shows, tends to limiting values close to unity. Experimental data were obtained for InSb crystals under strong excitation.
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