Abstract
The impact of the implementation of a high-k/metal-gate (HKMG) stack on the oxide integrity of input-output (I/O) pMOSFETs for DRAM periphery applications is investigated by means of low-frequency (LF) noise spectroscopy. It is shown that the predominant 1/f noise is governed by number fluctuations, irrespective of the details of the gate stack. However, the trap density in the 5 nm SiO2 gate oxide, derived from the noise power spectral density is significantly increased by the application of the HKMG and/or Al2O3 cap and the subsequent diffusion anneal at 900 oC.
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