Abstract
Data are presented for the Zn doping of Ga 0.5In 0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga 0.5In 0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga 0.5In 0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.
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