Incorporation of total ionizing dose effects into a compact model for p-GaN gate high electron mobility transistors

Abstract

Total ionizing dose (TID) characteristics of p-GaN gate high electron mobility transistors (HEMTs) under different bias conditions are explored in this work. Potential mechanism accounting for the TID response of p-GaN gate HEMTs is analyzed, based on which a TID effects model is developed. The TID effects model describes the relationship among threshold voltage of p-GaN gate HEMTs, total radiation dose, and electric field inside the p-GaN cap layer. Furthermore, an approach incorporating the TID effects model into Advanced Spice Model for HEMT (ASM-HEMT) is proposed, the reliability of which is validated by the well-fitted modeled results in comparison with the measured ones. This approach makes it possible to probe into the impact of TID effects on p-GaN gate HEMTs from the perspective of circuit level, which provides a basis for the follow-up GaN-based circuit design.