Abstract
Si-doped GaAs has been grown on (111)A and (111)A vicinal GaAs substrates and carrier concentrations measured for a range of Si fluxes and growth temperatures. The use of As 2 as opposed to As 4 has been examined. These results are discussed with respect to the growth mechanisms. Photoluminescence measurements have been made and compared with growth on an (001) substrate. The nature of the lattice site of incorporated Si is confirmed using local vibrational mode measurements.
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