Abstract
Metal Organic Chemical Vapour Deposition was used to grow PbTiO3 and PbZrxTi1-xO3 thin films on Pt/Ti/SiO2/Si substrates. Incorporation of Pb and Ti into PbTiO3 was studied as a function of the growth temperature, gas phase composition, and reactor pressure, keeping the other deposition parameters constant. The stoichiometric homogeneity in lateral and in vertical direction was measured on optimised PbTiO3 and PbZrxTi1-xO3 layers using Inductive Coupled Plasma – Atomic Emission Spectroscopy.
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