Abstract
The chemistry of oxygen atoms at the surface of an AlGaN layer for heterostructures was investigated by scanning photoemission microscopy (SPEM) using synchrotron radiation. SPEM imaging and space-resolved photoemission spectroscopy showed that the oxygen atoms were preferentially incorporated into AlGaN rather than GaN due to the high reactivity of Al with oxygen. In situ annealing at 1000°C could lead to the outdiffusion of oxygen impurities from the bulk AlGaN, resulting in a significant increase in the intensity of Al-O bonds at the AlGaN surface. Therefore, it is suggested that the unintentional doping of oxygen impurities in AlGaN could yield a heavily doped n-type AlGaN layer, resulting in a drastic reduction in effective Schottky barrier heights of metal contacts on AlGaN/GaN heterostructures. © 2004 The Electrochemical Society. All rights reserved.
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