Incorporation and luminescence properties of Er 2O 3 and ErF 3 doped Si layers grown by molecular beam epitaxy

Abstract

Er doped Si layer structures have been grown using Er 2O 3 or ErF 3 as evaporation source materials during Si molecular beam epitaxy. By using a low temperature growth process, an Er doping level of ~5×10 19/cm 3 has been achieved without precipitation. Structural and luminescence properties of these Er/O and Er/F doped Si samples have been studied. Electroluminescence (1.54 μm) has been observed from Er/O doped Si layers at room temperature through hot electron impact excitation. Comparison of the photo- and electroluminescence of these Er-doped Si structures has been made. The major thermal quenching behaviors of both luminescence emissions are characterized by the same activation energy value of ~160 meV, but different on-set temperatures.