Incorporating DC bias voltage in poly‐harmonic distortion modeling for RF power GaN transistors

Abstract

AbstractThis paper presents a novel poly‐harmonic distortion (PHD) model that incorporates the DC input and output bias voltages using Gaussian process regression (GPR). Simulation tests were conducted using a 10‐W gallium nitride (GaN) HEMT transistor from Wolfspeed, and the model implementation test was performed in the Keysight Advanced Design System environment. The results showed that the GPR‐based PHD model exhibited good performance in predicting both fundamental and harmonic behaviors over a wide range of bias variations with significant advantages over basic linear regression methods. Additionally, the model accurately predicted load‐pull simulations. The measurement test was conducted using a 6‐W GaN device, and the results showed a mean error of 2.22% and 4.54% for the fundamental and second harmonic of the reflected wave, respectively.