Abstract
A scheme is proposed to solve the structure of incommensurate interfaces, starting from high-resolution images of electron microscopy, supplemented by adapted simulation techniques and complemented by theoretical tools. Direct silicon bonding is a way to produce artificial interfaces, in particular incommensurate ones. We focus on a technology-driven tilt grain boundary in silicon. While the Fibonacci sequence, linked to the golden ratio, is a prototype of the quasicrystalline structures, a silver-ratio sequence allows us to analyze this incommensurate interface. The four-fold coordination of the Si atoms is kept at the interface.
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