Incoherent control of optical bistability in an InGaN/GaN quantum dot nanostructure

Abstract

The manipulation of bistable curve in the infrared (IR) region has been investigated theoretically in a unidirectional ring cavity doped by a four-level InGaN/GaN quantum dot nanostructure. The four-level quantum dot nanostructure is designed numerically by using the Schrödinger and Poisson equations. By controlling the size of the quantum dot and external voltage, one can design a four-level quantum dot with appropriate energy levels which can be suitable for interaction with IR signals. It is realized that the incoherent pumping fields play an essential role in controlling the intensity threshold of optical bistability. Decoherence effects such as the dephasing rate and electron density of the quantum dot are also analyzed at the threshold of optical bistability. Our proposed model due to its important application in all-optical systems may be favorable for real experimental evolution in infrared regions.