Incidence-angle dependent Cs incorporation in Si during low-energy bombardment: A dynamic computer simulation study

Abstract

The implantation of Cs atoms in silicon was investigated by dynamic computer simulations using the Monte-Carlo code T-DYN that takes into account the gradual change of the target composition due to the Cs irradiation. The incorporation of Cs atoms was studied for incidence angles ranging from 0° to 85° and for four impact energies (0.2, 0.5, 1 and 3 keV). The total implantation fluences were (1–2) × 10 17 Cs/cm 2, well above the values required to reach a stationary state. The steady-state Cs surface concentrations exhibit a pronounced dependence on impact angle and energy. At normal incidence, they vary between ∼0.57 (at 0.2 keV) and ∼0.18 (3 keV), but decrease with increasing incidence angle. Under equilibrium, the partial sputtering yield of Si exhibits the typical dependence on incidence angle, first increasing up to a maximum value (at ∼70°–75°) and declining sharply for larger angles. For all irradiation conditions a strongly preferential sputtering of Cs as compared to Si atoms is found, increasing with decreasing irradiation energy (from 4.6 at 3 keV to 7.2 at 0.2 keV) and for nearer- normal incidence.