Abstract
The liquid phase epitaxial growth technique was used to grow InAsSb p-n junctions on N-GaSb substrates from an Sb-rich solution. The electrical and optical properties of these diodes were investigated in the temperature range 80–300 K. Electroluminescence (EL) emission near 4.2 μ m was readily observed from our homojunction diodes. The effects of zinc doping on the diode electrical properties and electroluminescence quantum efficiency were also investigated. The I–V characteristics and EL efficiency of these p-n InAsSb/N-GaSb diodes were compared with those of n-InAsSb/N-GaSb isotype heterojunction diodes.
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