InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I

Abstract

Previous publications concerned with the development and investigation of InAsSb/InAsSbP double heterostructure lasers emitting at 3–4 µm fabricated by liquid phase epitaxy are reviewed. In pulsed mode, the maximum operating temperature of the lasers is 203 K, the characteristic temperature is 35 K, and differential quantum efficiency is 20±5% at 77K. Mesa-stripe lasers with a 10-to 30-µm stripe width and a 200-to 500-µm cavity length can operate in CW mode up to 110 K. The total optical output power of more than 10 mW at λ=3.6 µm is obtained at T=82 K in CW mode. The output power per mode does not exceed 2 mW/facet. A single-mode lasing is achieved in the temperature range of 12–90 K.