Abstract
In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.
Highlights
The development of InAs1−xSbx (InAsSb) has a long history
The III–V semiconductors are characterized by much stronger chemical bonds and higher chemical stability compared to HgCdTe, which is important from the producibility viewpoint
Initial reports based on experimental data at temperatures above or near 100 K estimate the direct-gap bowing parameter in InAsSb at 0.58–0.6 eV [50]
Summary
The development of InAs1−xSbx (InAsSb) has a long history. InAsSb was first synthesized in 1958 by Woolley and Smith [1]. Among them we can distinguish IV–VI (Pb1−xSnxTe), and II–VI (Hg1−xCdxTe) infrared (IR) material systems The bandgap of these semiconductors and the spectral response of the devices can be tuned for specific detectors’ applications. Due to large TCE, the indium bonds between silicon readout and the detector array in hybrid structure are exposed to adverse stresses during repeated cooling cycles from room temperature to cryogenic temperature Today this drawback is omitted by fabrication of monolithic PbS and PbSe polycrystalline arrays on Si substrates. The larger valence band energy differences between InAs and GaSb than that between InSb and InAsSb directed mainstream research towards InAs/GaInSb type-II superlattices (T2SLs) allowing larger absorption in LWIR spectral range. This evaluation is supported by theoretical estimates and experimental data
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