Abstract
We have investigated the device characteristics of InAs-inserted-channel In 0.52Al 0.48As/ In 0.53Ga 0.47As inverted high electron mobility transistors (HEMTs) with a novel ohmic structure. The ohmic contact between the ohmic electrodes and the two-dimensional electron gas (2DEG) formed in the InAs layer is obtained by direct contact with the ohmic electrodes-InAs, instead of an alloyed normal-metal and semiconductor as in a conventional inverted HEMT. The contact resistance of 0.11 Ωmm between the ohmic electrodes and the channel is smaller by a factor of 4, than that obtained using a conventional AuGeNi alloyed ohmic contact. For a 0.5 μm-gate device, a maximum extrinsic transconductance of 1.2 S/mm was obtained at 4.2 K, even at a very low drain voltage of 0.2 V. These results show that this ohmic contact formation allows us to obtain the improved HEMT characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.