Abstract
AbstractWe report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight‐band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. The quaternary alloy InGaAsP capping is studied by magneto‐photoluminescence. It is found to induce a better electronic confinement than InP. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto‐) (photo‐) (electro‐) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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