Abstract

The Gallium-free InAs/InAsSb type-II strained-layer superlattice (T2SLS) is an adjustable band gap, broadband III-V infrared detector material that has emerged in recent years as an alternative to the more established InAs/GaSb type-II superlattice (T2SL). The InAs/InAsSb T2SLS has been shown to be highly effective when implemented in the mid-wavelength infrared (MWIR) with the nBn [1] or XBn [2] , [3] detector architecture. The InAs/InAsSb T2SLS high operating temperature (HOT) unipolar barrier infrared detector (BIRD) focal plane array (FPA) [4] , [5] operates at significantly higher temperatures than the MWIR market-leading InSb FPA, while retaining the same III-V semiconductor manufacturability and affordability benefits. However, there are significant challenges in extending to long wavelengths. For the long wavelength infrared (LWIR) and very long cutoff wavelength infrared (VLWIR), InAs/InAsSb T2SLS detectors with n -type absorbers are limited in their attainable quantum efficiency (QE) due to shorter hole diffusion lengths and relatively modest absorption coefficients.

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