Abstract
We have systematically studied the effect of an In x Ga 1− x As insertion layer (IL) on the optical and structural properties of InAs quantum dot (QD) structures. A high density of 9.6×10 10 cm −2 of InAs QDs with an In 0.3Ga 0.7As IL has been achieved on a GaAs (1 0 0) substrate by metal organic chemical vapor deposition. A photoluminescence line width of 25 meV from these QDs has been obtained. We attribute the high density and high uniformity of these QDs to the use of the IL. Our results show that the InGaAs IL is useful for obtaining high-quality InAs QD structures for devices with a 1.3 μm operation.
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