Abstract
Effect of embedding InAs quantum dots( QDs) on the transport properties of two-dimensional gas( 2-DEG) in a modulation-doped AlGaAs / GaAs heterostructure was investigated.Samples with difference thickness( Tch) from QDs layer to 2-DEG were prepared using molecular beam epitaxy.Hall measurements show that the mobility drops dramatically with the decrease of Tch,and the electron concentration shows a same trend.Strain distributions have been measured by means of geometric phase analysis of the high-resolution transmission electron microscope images.The results show that the strain is focused in the edges and above of InAs QDs which are resulted from the extended lattice distortion.And the non-uniform strain field could be another key factor for the drop of the mobility besides coulomb scattering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
