Abstract
We give an overview of the generation of spin-polarized currents in all-semiconductor devices by utilizing the intrinsic spin-Hall effect. Two-staged cascades of Y-shaped three-terminal junctions of narrow quantum wires fabricated from InAs heterostructures with strong Rashba spin–orbit interaction allow all-electrical generation and detection of spin-polarized currents. We compare our low-temperature transport measurements to numerical simulations and find in both highly spin-polarized currents in the case of transport in the lowest one-dimensional subband.
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