InAs single quantum dots in Wurtzite InP nanowires emitting at telecommunication wavelengths

Abstract

Quantum dots (QDs) embedded in semiconductors nanowires are of great interest for photonic quantum technologies. We have previously reported that QDs in nanowires could be an efficient source for single photons [1] and entangled photon pairs [2] that is required for applications in quantum computation, quantum cryptography and quantum optics. For these later applications, the source has to meet requirements such as high symmetry, high brightness, high extraction efficiency, high-fidelity entanglement and a precise position control at the nanoscale level. The selective area vapor-liquid-solid (VLS) growth process is a very suitable technique to synthesize nanowires with high yield and homogeneity [3]. Moreover, the optical and electronic properties of these QD based sources are controllable by manipulating the nanowire dimension, dot size, and composition. We have been so far very successful in producing high optical quality single InAsP quantum dots in InP nanowire that are emitting in the range of 890–970 nm. The emission wavelength is controlled by the arsenic percentage in the InAsP dot which is about 25%.