Abstract
The GaAss2511dB surface was prepared by molecular beam epitaxy and analyzed in situ by scanning tunneling microscopy sSTMd and low-energy electron diffraction. Atomically resolved STM images of GaAss2511dB revealed a 131 reconstruction, terminated by Ga dimers. The deposition of 1.5 ML of InAs onto GaAss2511dB resulted in the twoto three-dimensional transition with appearance of small InAs quantum dots sQD’sd with a very narrow size distribution and a high number density. Low-index s011d, s101d, and s111dB facets, a rounded vicinal s001d region for the main part, and a high-index s135dB surface for a flat base determine a shape of the QD’s that is totally unsymmetrical. Ex situ–performed photoluminescence measure-
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