Abstract
We investigated MOCVD grown InAs QDs on a GaNAs buffer layer. Distribution uniformity and shape of QDs on buffer layers were characterized for different nitrogen (N) compositions from 0% to 2%. It was found that the distribution of QDs on a GaNAs buffer layer became more uniform than that on a GaAs and the coalescence of QDs was suppressed. Increase of the aspect ratio (diameter/height) was also observed by increase of N composition. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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