Abstract
Au-activated InAs nanowires were grown on Si substrates by solid source molecular beamepitaxy (SSMBE). Epitaxial growth of InAs nanowires turned out to be very sensitive tothe surface condition of the Si substrates. InAs nanowires having a growth direction, a high crystalline quality and a high aspect ratio over 300 with auniform lateral size along the growth direction were grown using a high-temperaturepre-annealing process in the MBE growth chamber to remove residual oxides from thesurface of the Si substrates.
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