InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications

Abstract

We propose herein a new nano-probe-assisted technique that enables the formation of site-controlled InAs quantum dots. High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated using a specially designed atomic-force-microscope probe, referred to as the Nano-Jet Probe. This probe has a hollow pyramidal tip with a submicron-sized aperture at the apex and an In-reservoir tank within the stylus. A voltage pulse was applied between the pyramidal tip and the sample to extract In clusters from the reservoir tank within the stylus through the aperture, resulting in In nano-dot formation. These In nano-dots were converted directly into InAs arrays by the subsequent annealing with irradiation of arsenic flux. The proposed technique has potential applications in photonics, including regular arrays of quantum bits and single photon emitters for quantum computers and quantum communications.