Abstract
We present effective bond orbital model calculations of the cutoff wavelengths and oscillator strengths of strained type-II (InAs)n/(InxGa1−xSb)m superlattice structures lattice mismatched to (001) GaSb substrates. The monolayer numbers n and m giving the maximal miniband-edge oscillator strength are determined for fixed wavelengths λ ranging from 5 to 30 μm, and for all values of the indium mole fraction x. At the longer wavelengths, the superlattice miniband gap is extremely sensitive to submonolayer fluctuations in n and m.
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