Abstract
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.
Highlights
Indium antimonide (InSb), a kind of III-V semiconductor with a narrow bandgap (0.17 eV), a large bulk electron mobility (≈7.7×104 cm2/V/s) [1], and a high thermoelectric figure of merit (0.6) [2], has been an attractive material for various applications such as highspeed and low-power electronics, infrared optoelectronics, quantum-transport studies, and thermoelectric power generation [3,4,5]
InSb NWs are formed in the sample with InAs seed layer, while no InSb NWs are observed in the sample without InAs seed layer
The InAs seed layer deposited at 550°C can form InAs NWs, which provide a template for the subsequent growth of InSb NWs
Summary
Indium antimonide (InSb), a kind of III-V semiconductor with a narrow bandgap (0.17 eV), a large bulk electron mobility (≈7.7×104 cm2/V/s) [1], and a high thermoelectric figure of merit (0.6) [2], has been an attractive material for various applications such as highspeed and low-power electronics, infrared optoelectronics, quantum-transport studies, and thermoelectric power generation [3,4,5]. The heteroepitaxial growth of InSb films on Si surface has attracted much attention due to the potential of integrating InSb devices on Si substrate. The lattice mismatch/strain in NWs is one of the most important features of NWs, in which the lattice mismatch/strain can be significantly relaxed due to their high surface/volume ratio and small lateral size, providing an opportunity to integrate InSb materials and devices on Si platform. It should be noted that gold, the most used seed particles for NW growth,
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
