Abstract
(InAs) m (GaAs) n superlattices were successfully grown by a new MBE method. Improved surface morphology was obtained even in the case of large mismatch to the InP substrate and large period of the superlattice. The elastic strain in epilayers was also studied by measuring the relation between the composition of EPMA method and the lattice mismatch of X-ray diffraction method.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
