Abstract
The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [11̅0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.
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