Abstract
Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less than the band offset, the detector still realizes photo response up to 1.93 μm. In addition, the detector shows the room-temperature external quantum efficiency of 7% and detectivity of 1.81 × 1010 cm /W without anti-reflection layer. Based on the above quantum efficiency value, an absorption coefficient of 1.1 × 104 cm−1 was also determined. It is clear that our work provides compelling evidences for the possibility of novel and low-cost infrared photodetector.
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